Metal-Oxide Thin-Film Transistor for Monolithic Integration with High-Pressure MEMS Pressure Sensor
发布时间：2024-01-08
元数据
名 称
Metal-Oxide Thin-Film Transistor for Monolithic Integration with High-Pressure MEMS Pressure Sensor
科技资源标识
CSTR:11738.14.NCDC.XDA14.PP6161.2024
DOI
10.1109/MEMS51670.2022.9699551
数据共享方式
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摘 要
The characteristics of thin-film transistors (TFTs) based on a novel metal-oxide (MO) semiconductor were found to be unaffected when tested under hydrostatic pressure up to 200 MPa (2000 atmospheres), thus proving feasible the potential inclusion of circuits based on such TFTs in applications exposed to high pressure loading. Systems integrating high-pressure sensors and TFT amplifier circuits were constructed and tested, achieving a 3.4 times higher sensitivity compared with the raw signal from the sensor. Combined with the low-temperature requirements (300 °C) and the simplicity of the process employed to realize the TFTs, the encouraging results presented here prove feasible the construction of systems with monolithically integrated pressure sensors and TFT circuits.
本作品采用
知识共享署名
4.0 国际许可协议进行许可。
CSTR:11738.14.NCDC.XDA14.PP6161.2024
10.1109/MEMS51670.2022.9699551